MRF151G

The MACOM MRF151G is an N-channel, broadband RF power field-effect transistor (MOSFET) designed primarily for high-power applications in FM broadcast or television channel frequency bands up to 175 MHz. This high-performance discrete semiconductor operates at a drain-source voltage of 50V and delivers up to 300W of output power. Housed in a standardized 375-04 ceramic package style featuring gold-plated terminals for superior conductivity and heat dissipation, it is highly regarded for its ruggedness and exceptional thermal stability. The specific component shown is categorized as a "Matched Pair" (indicated by the "M" stamp on the factory packaging label), which ensures identical electrical characteristics for balanced operation in push-pull amplifier configurations.